By Kerstin Schneider
ISBN-10: 3540296131
ISBN-13: 9783540296133
ISBN-10: 354029614X
ISBN-13: 9783540296140
Hugely delicate Optical Receivers primarily treats the circuit layout of optical receivers with exterior photodiodes. Continuous-mode and burst-mode receivers are in comparison. The monograph first summarizes the fundamentals of III/V photodetectors, transistor and noise types, bit-error expense, sensitivity and analog circuit layout, hence permitting readers to appreciate the circuits defined in most cases a part of the ebook. so that it will hide the subject comprehensively, targeted descriptions of receivers for optical facts verbal exchange normally and, specifically, optical burst-mode receivers in deep-sub-µm CMOS are offered. a number of targeted and complicated illustrations facilitate larger realizing.
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Extra info for Highly Sensitive Optical Receivers (Springer Series in Advanced Microelectronics)
Sample text
The retarding effect of C on boron diffusion can be exploited already with carbon concentrations of 1019 cm−3 . 2 base has been suppressed and the HBT characteristics has been considerably improved [73]. The reduction of boron diffusion in Si1−x−y Gex Cy /Si superlattices also may allow the development of new optoelectronic devices. SiGeC photodetectors are still to be developed and are not available yet. 5 SiGe/Si pin Hetero Bipolar Transistor Integration SiGe PDs were described above and in [74,75], however, the amplifiers in these references employed pure Si transistor devices.
The Ge layer was grown by ultra-high-vacuum chemical vapor deposition directly on an ultra-thin SOI layer (15 nm) after growth of a 30 nm Si buffer layer. At 350◦ C, first a 50 nm Ge seed layer was grown to suppress threedimensional growth. Then a 400 nm thick layer was grown at 600◦ C. The density of threading dislocations then was reduced by thermal cyclic annealing by ramping ten times between 780 and 900◦ C for 6 min each. The threading dislocation density then was 108 cm−2 . The use of the ultra-thin Si layer limits the amount of Si and minimizes the diffusion of Si into the Ge layer.
The efficiency and the speed of the PD depend on the width W of the i-layer. The wider the i-layer is, the higher is the efficiency and on the other hand, the smaller W , the faster the electrons and holes move through the ilayer and therefore the speed of the pin PD rises. Therefore a tradeoff between Light n InP p InP i InGaAs n InP Multiplication region Absorpiton region Fig. 7. Avalanche PD (schematic, cross section) Li Fig. 8. 4 SiGe Photodetectors 19 efficiency and speed must be found. The absorption coefficient α is high in InGaAs pin PDs and therefore W need not be as large as in an Si pin PD to achieve a high quantum efficiency.