By Wolfgang Menz, Jürgen Mohr, Oliver Paul
ISBN-10: 3527296344
ISBN-13: 9783527296347
ISBN-10: 3527613013
ISBN-13: 9783527613014
This thoroughly revised variation of a bestselling concise advent to microsystems know-how comprises the newest traits during this rising clinical self-discipline. The chapters on silicium and LIGA know-how are tremendously multiplied, when new subject matters comprise program points in medication and wellbeing and fitness expertise, lithography and electroplating.
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Example text
Thick oxides are therefore produced by wet oxidations. The wet oxidation process produces layers with less density and a lower breakdown voltage compared with those prepared by dry oxidation processes. 2 The Parallels to Microelectronics 32 Diffusion Doping in microelectronics is most important in producing p-n junctions. These junctions form the central element of each component within the semiconductor technology. During crystal pulling the ingots are already doped to n- or p-type semiconductors.
The ions can penetrate deeply into the channels in the lattice of the crystal at these special crystal orientations. This is called the channelling effect. Common ions used in the manufacture of semiconductors are e. g. B’, P+ and As+. 0 ’ and Ff are known as “special ions”. In the manufacture of semiconductors usual ion energies are 200 keV, but energies of up to 1 MeV or multiple charged ions can be used. The apparatus used can be separated into low and middle current implanters (ion currents up to 2 mA), and high current implanters for currents up to 25 mA.
2 The Parallels to Microelectronics 28 substrate, or by electrical or optical energy in a gas discharge. For the process to work it is important that the reaction products (except for the desired deposited material) are gaseous so that they can be removed (pumped off). In the last few years CVD has virtually replaced the evaporation technology within semiconductor technology. Using the technology of CVD it is possible to produce all the layers necessary for an integrated circuit. Single crystal growth can be accoinplished in CVD using epitaxial approaches and will be dealt with in the next paragraph.