By Yoshio Nishi, Robert Doering
ISBN-10: 1574446754
ISBN-13: 9781574446753
Preserving the excellent and in-depth strategy that cemented the bestselling first edition's position as a regular reference within the box, the instruction manual of Semiconductor production expertise, moment variation beneficial properties new and up to date fabric that retains it on the leading edge of present day such a lot dynamic and swiftly transforming into box. Iconic specialists Robert Doering and Yoshio Nishi have back assembled a crew of the world's best experts in each sector of semiconductor production to supply the main trustworthy, authoritative, and industry-leading info available.
Stay present with the most recent Technologies
In addition to updates to almost each current bankruptcy, this version positive factors 5 completely new contributions on…
Silicon-on-insulator (SOI) fabrics and devices
Supercritical CO2 in semiconductor cleaning
Low-κ dielectrics
Atomic-layer deposition
Damascene copper electroplating
Effects of terrestrial radiation on built-in circuits (ICs)
Reflecting speedy development in lots of components, a number of chapters have been seriously revised and up-to-date, and every now and then, rewritten to mirror quick advances in such parts as interconnect applied sciences, gate dielectrics, photomask fabrication, IC packaging, and three hundred mm wafer fabrication.
While no publication may be up to the moment with the advances within the semiconductor box, the guide of Semiconductor production expertise retains an important facts, equipment, instruments, and methods shut to hand.
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Extra info for Handbook of Semiconductor Manufacturing Technology
Sample text
Nowak, P. M. Solomon Y. Taur, and H-S. P. Wong, Proc IEEE, 89, (2001): 259; Taur, Y. C. H. Wann, and D. J. Frank, IEDM Tech. 23 for doping densities in the range of 1! 21. Two curves are shown corresponding to the expected maximum device voltages. Shown across the top of the figure is the corresponding electric field over the range of 1–10 MV/cm. The values of current are similar to the values reported by Frank et al. [29], which includes some experimental data points. 23, it can be seen that there are large potential problems with junction leakage for the smallest device dimensions.
6 expected values. In general, more improvement is seen to be theoretically possible at low fields than high fields; and higher dielectric constant materials offer larger potential improvements even though they tend to have reduced barrier heights. The larger parameters in the table would be expected to show the lowest leakage currents, all other things being equal. It must be remembered that the values in the table do not account for any possible differences in tunneling effective mass between the different materials.
1–56 1-18 Handbook of Semiconductor Manufacturing Technology achieving the scaled parameters and possible enhancements are discussed in a subsequent section on manufacturing issues. Device current drive is important because it relates to other important parameters, such as switching speed or logic gate delay, and power dissipation. In terms of logic gate delay, the important parameters can be obtained from the simple equation Idsat Z CL DVL =Dt ð1:12Þ where CL is the gate load capacitance and DVL is the change in load voltage in time Dt.