Download Principles of Lithography, Second Edition by Harry J. Levinson PDF

By Harry J. Levinson

ISBN-10: 0819456608

ISBN-13: 9780819456601

Lithography is a box within which advances continue at a speedy velocity. This publication was once written to handle numerous wishes, and the revisions for the second one variation have been made with these unique pursuits in brain. Many new subject matters were incorporated during this textual content commensurate with the growth that has taken position up to now few years, and several other topics are mentioned in additional element. This publication is meant to function an advent to the technological know-how of microlithography for those who are strange with the topic. issues at once concerning the instruments used to fabricate built-in circuits are addressed intensive, together with such subject matters as overlay, the phases of publicity, instruments, and light-weight resources. this article additionally comprises a number of references for college kids who are looking to examine specific subject matters in additional aspect, and so they give you the skilled lithographer with lists of references through subject in addition. it's anticipated that the reader of this ebook could have a origin in simple physics and chemistry. No themes would require wisdom of arithmetic past undemanding calculus.

Contents

- Preface

- assessment of lithography

- Optical trend formation

- Photoresists

- Modeling and skinny movie results

- Wafer steppers

- colour Plates overlay

- mask and reticules

- Overcoming the diffraction restrict

- Metrology

- the bounds of optical lithography

- Lithography expenditures

- substitute lithography thoughts

- Appendix A: Coherence

- Index

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Additional resources for Principles of Lithography, Second Edition

Example text

Because we are considering only a long space of glass in the photomask in this illustrative example, the light intensity I at the plane of the wafer is a function I(x) of only one variable, where x is the distance at the wafer plane along the direction perpendicular to the space. To simplify the discussion, we also initially assume the substrate, which is coated by the resist film, to be flat and nonreflecting. Effects due to substrate topography and reflectivity are addressed later. The basic assumption for this simple model is that the thickness T(x) of photoresist remaining after development is determined by the exposure energy dose E(x) = I(x)*t, where t is the exposure time: T ( x) = TE ( E ) = TE [ E ( x)] .

In several expressions––those for resist slope [Eq. 19)], variation of linewidth with changing resist thickness [Eq. 27)], and exposure latitude [Eq. 3). For this reason, the image log slope was introduced as a metric of image quality,11 and continues to be widely used. 3 Several key lithography parameters in relation to the image log slope. Parameter Resist profile Relation to the image log slope (ILS) tan   T0   ILS Exposure latitude L  2E ( x) / E ( x)  ILS Linewidth change with resist thickness x  (T / T )  ILS 1 1 Higher resolution optics can affect the printing of large objects, as well as enable the printing of smaller features.

While the index of refraction, of the air is  1, it differs slightly, and changes as barometric pressure changes.

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